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| Provisional Data Sheet No.PD-6.0027A IRSF3010 FULLY PROTECTED POWER MOSFET SWITCH General Description: The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections. The on chip protection circuit latches off the POWER MOSFET in case the drain current exceeds 14A (typical) or the junction temperature exceeds 165C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn off with inductive loads. The input current requirements are very low (300uA) which makes the IRSF3010 compatible with most existing designs based on standard POWER MOSFETs. Rating Summary: Vds(clamp) Rds(on) Ids(sd) Tj(sd) EAS 50 V 80 m 11 A 155 C 400 mJ Features: n Extremely Rugged for Harsh Operating Environments n Over Temperature Protection n Over Current Protection n Active Drain to Source Clamp n ESD Protection n Compatible with standard POWER MOSFET n Low Operating Input Current n Monolithic Construction n Dual set/reset Threshold Input Applications: n DC Motor Drive n Solenoid Driver Drain Tab Pin Assignment Pin 1 - Input Pin 2 - Drain Pin 3 - Source Tab - Drain 1 2 3 IRSF3010 IRSF3010S IRSF3010 - Block Diagram Source Available Packages IRSF3010 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25C unless otherwise specified.) Symbol Vds, max Vin, max Ids Pd EAS Vesd1 Vesd2 TJop TStg TL Parameter Definition Continuous Drain to Source Voltage Continuous Input Voltage Continuous Drain Current Power Dissipation Linear Derating Factor for Tc > 25C Unclamped Single Pulse Inductive Energy Electrostatic Discharge Voltage (Human Body Model) (Machine Model) Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) Min. -- -0.3 -- -- -- -- -- -- -55 -55 -- Max. 50 10 self limited Units Test Conditions V 40 0.33 400 4000 1000 self-limited 175 300 W W/C mJ V Tc 25C 1000pF. 1.5k 200pF, 0 o C Static Electrical Characteristics (Tc = 25C unless otherwise specified.) Symbol Vds,clamp Rds(on) Parameter Definition Drain to Source Clamp Voltage Drain to Source On Resistance Min. Typ. Max. Units 50 -- -- -- -- 54 56 70 85 53 -- -- 10 2.0 0.25 0.35 0.5 0.6 10.8 1.2 -- 62 80 -- -- 10 100 250 2.5 0.6 0.85 1.0 1.2 -- 1.5 V mA V A m V Test Conditions Ids = 10mA Ids = 11A, tp = 700 S Vin = 5V, Ids = 4A Vin = 4V, Ids = 4A Vin = 10V, I ds = 4A Vds = 12V, Vin = 0V Vds = 50V, Vin = 0V Vds =40V,Vin=0V,Tc =150oC Idss Drain to Source Leakage Current -- -- -- Vth I i, on Ii, off Input Threshold Voltage Input Supply Current (Normal Operation) Input Supply Current (Protection Mode) 1.5 -- -- -- -- 10 -- Vds = 5V, Ids = 1mA Vin = 5V Vin = 10V Vin = 5V Vin = 10V Iin = 10mA Ids = -17A, Rin = 1k Vin, clamp Input Clamp Voltage Vsd Body-Drain Diode Forward Drop Thermal Characteristics Symbol Rjc RjA Parameter Definition Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Min. Typ. Max. Units -- -- 3.0 60 -- -- C/W C/W Test Conditions 2 IRSF3010 Switching Electrical Characteristics: (Vcc = 14V, Resistive Load RL = 5, Tc = 25 C.) Please refer to Figure 15 for switching time definitions. Symbol tdon tr tdoff tf Parameter Definition Turn-On Delay time Rise Time Turn-Off Delay time Fall Time Min. -- -- -- -- -- -- -- -- Typ. Max. Units 425 150 2000 425 650 850 500 450 650 -- 4000 -- 1000 -- 800 -- nS Test Conditions Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V Vin = 5V Vin = 10V Protection Characteristics: (Tc = 25 C unless otherwise specified.) Symbol Ids(sd) Tj(sd) Vprotect tIresp tIblank Ipeak Vreset treset tTresp Parameter Definition Over-Current Shutdown Threshold Over Temperature Shutdown Threshold Minimum Input Voltage for Over-temp fxn. Over Current Response Time Over Current Blanking Time Peak Short Circuit Current Protection Reset Voltage Protection Reset Time OverTemperature Response Time Min. Typ. Max. Units 11 155 -- -- -- -- -- -- -- 14 165 3 2 3 20 1.3 7 12 17 -- -- -- -- -- -- -- -- A C V Test Conditions Vin = 5V Vin = 5V, Ids = 2A See figure 16 for definition See figure 16 for definition See figure 16 for definition See figure 17 for definition See figure 18 for definition S A V S Temperature Coefficients of Electrical Characteristics: (Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters. Symbol Parameter Definition Min. -- -- -- -- Typ. Max. Units 18.2 -3.2 7.0 -21.5 -- -- -- -- mV/oC Test Conditions Ids = 10mA Vds = 5V, Ids = 1mA Iin = 10mA Vds,clamp Temperature Coefficient of Drain to Source Clamp Voltage Temperature Coefficient of Input Threshold Voltage Vin,clamp Temperature Coefficient of Input Clamp Voltage Ids(sd) Temperature Coefficient of Over-Current Shutdown Threshold Vth mA/oC Vin = 5V Notes: 1. EAS is tested with a constant current source of 11A applied for 700S with Vin = OV and starting Tj = 25oC. 2. Input current must be limited to less than 5mA with a 1k resistor in series with the input when the Body-Drain Diode is forward biased. 3 IRSF3010 120 110 T = 25C 120 110 Ids = 4A Rds(on) (mOhm) 100 90 80 Vin = 5V 70 Vin = 7V 60 50 40 2 4 6 8 10 12 14 16 18 Vin = 10V Vin = 4V Rds(on) (mOhm) 100 90 Vin = 5V 80 70 60 50 40 30 -50 -25 0 25 50 Vin = 10V 75 100 125 150 Ids (A) Temperature (C) Fig. 3 - On Resistance vs Drain to Source Current 17 16 Fig. 4 - On Resistance vs. Temperature 15 T = 25C Shut Down Current (A) Shut Down Current (A) 16 Vin = 5V 14 15 13 12 14 11 13 4 5 6 7 8 9 10 10 -50 -25 0 25 50 75 100 125 150 Input Voltage (Volts) Temperature (C) Fig. 5 - Over-current Shutdown Threshold vs Input Voltage 1.6 1.4 1.2 T=25C Fig. 6 - Over-current Shutdown Threshold vs Temperature 3500 Vdd = 25V 3000 2500 Ids = 8A 2000 1500 1000 500 0 0 25 50 75 100 125 150 Ids = 12A 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 Iin,on Iin,off Single Pulse Energy to Failure (mJ) Input Current (mA) Rating Input Voltage (Volts) Starting Junction Temperature (C) Figure 7 - Input Current vs. Input Voltage Fig. 8 - Unclamped Single Pulse Inductive Energy to Failure vs Starting Junction Temperature 4 IRSF3010 2.50 T = 25C Rise T ime, On Delay (S ) 2.00 R ise T ime, On Delay (S) 2.00 Rise Time 1.50 Vin = 5V 1.00 On Delay 0.50 2.50 1.50 Rise Time 1.00 On Delay 0.50 0.00 3 4 5 6 7 8 9 10 11 Input Voltage (Volts) 0.00 -50 -25 0 25 50 75 100 125 150 Temperature (C) F ig. 9 - Tu rn on characteristics vs Input Voltag e F ig. 10 - Turn on characteristics vs Temperature 0.9 T = 25C Fall T ime, Off Delay (S ) Off Delay 0.7 0.6 0.5 0.4 0.3 3 4 5 6 7 8 9 10 11 Input Voltage (Volts) Fall Time F all T ime, Off Delay (S) 0.8 0.9 0.8 0.7 0.6 Vin = 5V 0.5 Fall Time 0.4 0.3 -50 -25 0 25 50 75 100 125 150 Temperature (C) Off Delay Fig. 11 - T urn off characteristics vs Input Voltage Fig. 12 - Turn off characteristics vs Temperature 100 T hermal R esponse (C/W) Reverse Drain Current (A) 10 Duty Factor = 0.5 T = 150C 1 0.1 10 0.1 0 T = 25C DF= 0.50 0.20 0.10 0.05 0.02 0.01 0.00 1 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Source to Drain Voltage (Volts) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse Duration tp (S) Fig. 13 - Source-Drain Diode Forward Voltage Fig. 14 - Tran sien t Thermal Impedan ce, Junction to Case 5 IRSF3010 V in V in 5V RL = 0 Vcc = 14V 50% t Vds 90% t I ds I peak 10% t tdon tr tdoff tf t Iblank Short applied before turn-on t Iresp Short applied after turn-on t Fig. 15 - Definition of Switching times. Fig. 16 - Definition of Ipeak, tIblank, tIresp V in 5V V in 5V t I ds t < t reset I ds(sd) t > t reset t I ds t R L = 1 mH Vcc = 14V t Tresp R L = 10 Vcc = 14V T J = TJSD + 5C t Fig. 17 - Definition of treset Fig. 18 - Definition of tTresp 6 IRSF3010 Case Outline TO-220AB (IRSF3010) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions shown are in millimeters (inches) 4. Conforms to JEDEC outline TO-251AA 5. Dimension does not include solder dip. Solder dip max. +0.16 (.006) LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain 7 IRSF3010 Case Outline SMD-220 (IRSF3010S) 8 IRSF3010 Tape and Reel SMD-220 (IRSF3010S) 9 IRSF3010 Application Information Introduction Protected monolithic POWER MOSFETs offer simple, cost effective solutions in applications where extreme operating conditions can occur. The margin between the operating conditions and the absolute maximum values can be narrowed resulting in better utilization of the device and lower cost. ESD protection also reduces the off-circuit failures during handling and assembly. Block Diagram The zener diode between the input and the source (see figure 20) provides the ESD protection for the input and also limits the applicable voltage to the input to 10V. The R-S flip-flop memorizes the occurrence of an error condition and controls the Q2 and Q3 switches. The flip-flop can be cleared by holding the input low for the specified minimum duration. COMP1 and COMP2 comparators are used to compare the over-current and over-temperature signals with the built-in reference. Either comparator can reset the fault flip-flop and turn Q1 off. During fault condition, Q2 disconnects gate of Q1 from the input, Q3 shorts the gate and source of Q1, resulting in rapid turn-off of Q1. The zener diode between the gate and drain of Q1 turns Q1 on, when the drain to source voltage exceeds 55V. General Description The IRSF3010 is a fully protected monolithic N-channel, logic level POWER MOSFET with 80m (max) on-resistance. The built-in protections include overcurrent, over-temperature, ESD and active over-voltage protections. The over-current and over-temperature protection makes the IRSF3010 indestructible at any load conditions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3010 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads. The IRSF3010 Intelligent Power Switch that is available in the TO220 package offers an easy upgrade from non-protected devices. Switching Characteristics In the IRSF3010 the control logic and the protection circuits are powered from the input pin. When positive voltage appears at the input pin the R-S flip-flop turns Q2 on and connects the gate of the main device to the input. The turn-on speed is limited by the channel resistance of Q2 and the gate charge requirements of Q1. The typical switching waveforms at 5V input voltage are shown in figure 21. Using higher input voltage will improve the turn-on time but it does not affect the turnoff switching speed. Input voltage 5V/ Drain voltage 5V/ Drain Current: 1A/div. Time: 1sV/div. Fig.20 Block Diagram Fig.21 Waveforms switching clamped indictive load using 5V input voltage 10 IRSF3010 The typical waveforms at 7V input voltage are shown in figure 22. In typical switching applications, below 40kHz, the difference in switching losses between the IRSF3010 and the same size standard MOSFET is negligible. Input voltage 5V/ The typical waveforms at over-current shut-down are shown in figure 23. After turn-on the current in the inductor at the drain starts ramping up. At about 15A the over-current protection shuts down the device. Over-temperature Protection Figure 24 illustrates the operation of the over-temperature protection. The IRSF3010 switches a 1 resistive load to a 12V power supply. When the thermal balance is established the junction temperature is limited on pulse by pulse basis. Input voltage 10V/div. Drain voltage 5V/ Drain Current: 1A/ Drain voltage 5V/div. Time: 1sV/div. Fig. 22 Switching waveforms with 7V Input voltage Over-current Protection When the drain current exceeds the preset limit the protection circuit resets the internal flip-flop and turns Q1 off. The normal operation can be restored by holding the input voltage below the specified threshold level (approx. 1.3V) for the specified minimum treset time. Input voltage 5V/div. Drain Current: 2A/div. Time: 10sV/div. Fig. 24 Over-temperature shut-down Over-voltage Protection When the drain to source voltage exceeds 55V the zener diode between gate and drain turns the IRSF3010 on, before the breakdown voltage of the drain-source diode is reached. This greatly enhances the energy the device can withstand safely during turnoff of inductive loads compared to avalanche breakdown. Thus the device can be used for fast deenergization of inductive loads. The absorbed energy is limited only by the maximum junction temperature. Drain voltage 5V/div. Drain Current: 2A/div. Time: 10sV/div. Fig. 23 Waveforms at over-current shut-down WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 12/96 11 |
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